 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| IPP028N08N3 G IPI028N08N3 G OptiMOS(R)3 Power-Transistor Features * N-channel, normal level * Excellent gate charge x R DS(on) product (FOM) * Very low on-resistance R DS(on) * 175 C operating temperature * Pb-free lead plating; RoHS compliant * Qualified according to JEDEC1) for target application Product Summary V DS R DS(on),max ID 80 2.8 100 previous engineering sample codes: IPP02CN08N V m A * Ideal for high-frequency switching and synchronous rectification Type IPP028N08N3 G IPI028N08N3 G Package Marking PG-TO220-3 028N08N PG-TO262-3 028N08N Maximum ratings, at T j=25 C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 C2) T C=100 C Pulsed drain current2) Avalanche energy, single pulse Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS V GS P tot T j, T stg T C=25 C T C=25 C I D=100 A, R GS=25 Value 100 100 400 1430 20 300 -55 ... 175 55/175/56 mJ V W C Unit A Rev. 1.0 page 1 2008-01-25 IPP028N08N3 G IPI028N08N3 G Parameter Symbol Conditions min. Values typ. max. Unit Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient R thJC R thJA minimal footprint 6 cm2 cooling area3) 0.5 62 40 K/W Electrical characteristics, at T j=25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=1 mA V GS(th) I DSS V DS=V GS, I D=270 A V DS=80 V, V GS=0 V, T j=25 C V DS=80 V, V GS=0 V, T j=125 C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20 V, V DS=0 V V GS=10 V, I D=100 A V GS=6 V, I D=50 A Gate resistance Transconductance RG g fs |V DS|>2|I D|R DS(on)max, I D=100 A 80 2 2.8 0.1 3.5 1 A V 94 10 1 2.4 2.8 2.7 187 100 100 2.8 4.2 S nA m 1) J-STD20 and JESD22 See figure 3 2) 3) 2 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.0 page 2 2008-01-25 IPP028N08N3 G IPI028N08N3 G Parameter Symbol Conditions min. Values typ. max. Unit Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics 4) Gate to source charge Gate to drain charge Switching charge Gate charge total Gate plateau voltage Output charge Reverse Diode Diode continous forward current Diode pulse current Diode forward voltage Reverse recovery time Reverse recovery charge 4) C iss C oss C rss t d(on) tr t d(off) tf V DD=40 V, V GS=10 V, I D=100 A, R G=1.6 V GS=0 V, V DS=40 V, f =1 MHz - 10700 2890 100 28 73 86 33 14200 pF 3840 150 ns Q gs Q gd Q sw Qg V plateau Q oss V DD=40 V, V GS=0 V V DD=40 V, I D=100 A, V GS=0 to 10 V - 50 30 50 155 4.7 210 67 45 72 206 279 nC V nC IS I S,pulse V SD t rr Q rr T C=25 C V GS=0 V, I F=100 A, T j=25 C V R=40 V, I F=I S, di F/dt =100 A/s - 1.0 113 317 100 400 1.2 - A V ns nC See figure 16 for gate charge parameter definition Rev. 1.0 page 3 2008-01-25 IPP028N08N3 G IPI028N08N3 G 1 Power dissipation P tot=f(T C) 2 Drain current I D=f(T C); V GS10 V 350 120 300 100 250 80 P tot [W] 200 I D [A] 150 100 50 0 0 50 100 150 200 60 40 20 0 0 50 100 150 200 T C [C] T C [C] 3 Safe operating area I D=f(V DS); T C=25 C; D =0 parameter: t p 103 limited by on-state resistance 1 s 10 s 100 s 4 Max. transient thermal impedance Z thJC=f(t p) parameter: D =t p/T 100 0.5 102 1 ms Z thJC [K/W] I D [A] 10 ms DC 10-1 0.2 0.1 10 1 0.05 0.02 0.01 single pulse 10 0 10 100 101 102 -2 10-1 10-5 10-4 10-3 10-2 10-1 100 V DS [V] t p [s] Rev. 1.0 page 4 2008-01-25 IPP028N08N3 G IPI028N08N3 G 5 Typ. output characteristics I D=f(V DS); T j=25 C parameter: V GS 400 10 V 6V 7V 6 Typ. drain-source on resistance R DS(on)=f(I D); T j=25 C parameter: V GS 15 350 12 300 5.5 V 4.5 V 5V 200 R DS(on) [m] 5V 250 9 I D [A] 150 6 100 3 50 4.5 V 10 V 5.5 V 7V 6V 0 0 1 2 3 4 5 0 0 50 100 150 200 V DS [V] I D [A] 7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j 300 8 Typ. forward transconductance g fs=f(I D); T j=25 C 250 250 200 200 150 150 g fs [S] 100 25 C 175 C I D [A] 100 50 50 0 0 2 4 6 8 0 0 50 100 150 V GS [V] I D [A] Rev. 1.0 page 5 2008-01-25 IPP028N08N3 G IPI028N08N3 G 9 Drain-source on-state resistance R DS(on)=f(T j); I D=100 A; V GS=10 V 10 Typ. gate threshold voltage V GS(th)=f(T j); V GS=V DS parameter: I D 6 4 5 3.5 3 4 2700 A R DS(on) [m] 2.5 98 % 270 A 3 typ V GS(th) [V] 100 140 180 2 2 1.5 1 1 0.5 0 -60 -20 20 60 0 -60 -20 20 60 100 140 180 T j [C] T j [C] 11 Typ. capacitances C =f(V DS); V GS=0 V; f =1 MHz 12 Forward characteristics of reverse diode I F=f(V SD) parameter: T j 105 103 Ciss 104 Coss 102 175 C 175 C, 98% 25 C C [pF] 103 I F [A] 25 C, 98% Crss 101 102 101 0 20 40 60 80 100 0 0.5 1 1.5 2 V DS [V] V SD [V] Rev. 1.0 page 6 2008-01-25 IPP028N08N3 G IPI028N08N3 G 13 Avalanche characteristics I AS=f(t AV); R GS=25 parameter: T j(start) 1000 14 Typ. gate charge V GS=f(Q gate); I D=50 A pulsed parameter: V DD 12 40 V 10 20 V 100 25 C 8 60 V I AV [A] 150 C 100 C V GS [V] 1000 6 10 4 2 1 0.1 1 10 100 0 0 50 100 150 200 t AV [s] Q gate [nC] 15 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=1 mA 16 Gate charge waveforms 90 V GS Qg 80 V BR(DSS) [V] V g s(th) 70 Q g(th) Q gs -60 -20 20 60 100 140 180 Q sw Q gd Q g ate 60 T j [C] Rev. 1.0 page 7 2008-01-25 IPP028N08N3 G IPI028N08N3 G PG-TO262-3 (I-Pak) Rev. 1.0 page 8 2008-01-25 IPP028N08N3 G IPI028N08N3 G PG-TO220-3 Rev. 1.0 page 9 2008-01-25 IPP028N08N3 G IPI028N08N3 G Published by Infineon Technologies AG 81726 Munich, Germany (c) 2007 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 page 10 2008-01-25 |
Price & Availability of IPP028N08N3G
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |